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DMN3050S
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance:
35m ? @ V GS = 10V
50m ? @ V GS = 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q 101 Standards for High Reliability
SOT-23
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
Gate
Source
G
S
Maximum Ratings
TOP VIEW
@T A = 25°C unless otherwise specified
Equivalent Circuit
TOP VIEW
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
± 20
Unit
V
V
Drain Current (Note 1)
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
T A = 25°C
T A = 70°C
Pulsed
I D
I DM
I S
5.2
4.2
20
2.0
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
30
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1
± 100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
g fs
V SD
1
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1.5
27
40
6.5
0.7
3
35
50
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1
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 5.2A
V GS = 4.5V, I D = 4.2A
V DS = 5V, I D = 5.2A
V GS = 0V, I S = 1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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390
55
45
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pF
pF
pF
V DS = 15V, V GS = 0V
f = 1.0MHz
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB. t ≤ 5 sec.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN3050S
Document number: DS31503 Rev. 3 - 2
1 of 4
www.diodes.com
November 2008
? Diodes Incorporated
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